Abstract

AbstractThe first reduction methodology, compatible with flexible, temperature‐sensitive substrates, for the production of reduced spin‐coated graphene oxide (GO) electrodes is reported. It is based on the use of a laser beam for the in situ, non‐thermal, reduction of spin‐coated GO films on flexible substrates over a large area. The photoreduction process is one‐step, facile, and is rapidly carried out at room temperature in air without affecting the integrity of the graphene lattice or the flexibility of the underlying substrate. Conductive graphene films with a sheet resistance of as low as 700 Ω sq−1 and transmittance of 44% can be obtained, much higher than can be achieved for flexible layers reduced by chemical means. As a proof of concept of our technique, laser‐reduced GO (LrGO) films are utilized as transparent electrodes in flexible, bulk heterojunction, organic photovoltaic (OPV) devices, replacing the traditional ITO. The devices displayed a power‐conversion efficiency of 1.1%, which is the highest reported so far for OPV device incorporating reduced GO as the transparent electrode. The in situ non‐thermal photoreduction of spin‐coated GO films creates a new way to produce flexible functional graphene electrodes for a variety of electronic applications in a process that carries substantial promise for industrial implementation.

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