Abstract
This article reports on the fabrication and performance of flexible organic light-emitting diodes (OLED) using metal interfaced indium tin oxide (ITO) anodes. ITO films were either doped with nickel (Ni) using a co-sputter method or surface embedded with Ni using photolithography and polishing approach to form a surface with high work function. This high work function surface allows the potential barrier between ITO anode and organic hole transport layer to be lowered and thus to enhance the characteristics of OLED devices. OLED devices with a structure of Al/Alq3/NPB/ITO exhibit reduced threshold voltage and turn-on voltage by at least 2.0 V when using Ni-doped or Ni-embedded ITO at the NPB/ITO interface. The formation of a nickel oxide phase (forming high work function＞5.0 eV) and better contacts (increasing hole injection efficiency) at ITO/NPB interfaces are suggested to be the main causes for the improved characteristics. An OLED display performing a so-called selective light-emitting pattern with the Ni-doped ITO scheme is demonstrated.
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