Flexible Organic Field-Effect Transistors Based on the Composites with the Same Thiophene Backbone by Wet Process

Abstract

Organic field-effect transistors (OFETs) based on a composite with the same thiophene backbone were fabricated by spin coating using an annealing solution of poly(3-hexylthiophene) (PAT6) and α, ω-dihexylsexithiophene (DH-6T). The morphology of grains on the non-octadecyltrichlorosilane (OTS) treated and OTS treated gate insulators is granular and tube-like, respectively. The different morphologies of the OFETs with non-OTS treated and OTS-treated gate insulators result in the improvement of field-effect mobility. In the case of poly(ethylene naphthalate) substrate, an OFET with an 89 wt% DH-6T composite corresponding to two molecules of DH-6T per hexylthiophene repeating unit had a carrier mobility of 0.019 cm 2 /Vs.