Abstract
However,thelithographicrouteshowsstrongdemandsonthesurfaceflatnessofeachlayerin the multilevel chip architectures. To meet the processingnature of lithography, a global planarization of interlayermetals by chemical–mechanical polishing is therefore neededto reduce the interval between the metal layer and thephotomask, and to guarantee exposure resolution when wiresreachthesub-300nmscale.Two-photonabsorption(TPA)hasalso been tried for the fabrication of metal microstructures byusing suitable salt solutions as the metal source and photo-sensitive molecules as the photoinitiator.
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