Abstract

This research is devoted to the fabrication of polyvinyl alcohol (PVOH) based n-type thermoelectric composites with innovative hybrid bismuth selenide-multiwalled carbon nanotube (Bi2Se3-MWCNT) fillers for application in flexible thermoelectric devices. Hybrid fillers were synthesized by direct deposition of Bi2Se3 on multiwalled carbon nanotubes using a physical vapor deposition method, thus ensuring direct electrical contact between the carbon nanotubes and Bi2Se3. The Seebeck coefficient of prepared PVOH/Bi2Se3-MWCNT composites was found to be comparable with that for the Bi2Se3 thin films, reaching −100 µV·K−1 for the composite with 30 wt.% filler, and fluctuations of the resistance of these composites did not exceed 1% during 100 repetitive bending cycles down to 10 mm radius, indicating the good mechanical durability of these composites and proving their high potential for application in flexible thermoelectrics. In addition, other properties of the fabricated composites that are important for the use of polymer-based materials such as thermal stability, storage modulus and linear coefficient of thermal expansion were found to be improved in comparison with the neat PVOH.

Highlights

  • Thermoelectric materials and technologies based on them such as thermoelectrical generators (TEG) enable the direct conversion of heat to electricity

  • Replacement of battery-powered wearable devices with TEGs operating at the temperature difference between the human body and surrounding environment would significantly reduce the need in small batteries for such devices and contribute to the reduction of environmental contamination

  • It is expected that these n-type semiconducting materials could be technically suitable for application in flexible thermoelectric devices as the n-type component

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Summary

Introduction

Thermoelectric materials and technologies based on them such as thermoelectrical generators (TEG) enable the direct conversion of heat to electricity. 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non-condthuTecrEtmivcooeempleopclotyrsmiictefisrl,laewsr.haIinmchtahitsirsibxaRapfesopceredronthoatlecnyrh,t-,hPeeilreuecstreeitcoaafllnl.yo[1nn6o-]cndo-necomdnuodcnutsicvttreiavpteeodelnyavmltiereorrnnaamstiaevnemtaaalptlyrpirxforfiaeocnrhdthflyoerr-fabrica er It is expected that these n-type semiconducting materials could be technically suitable for application in flexible thermoelectric devices as the n-type component

Materials and Methods
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Reference bulk materials
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