Abstract
An original approach has been presented to model the regularities and parameters of resistive switching based on the kinetic Monte Carlo (kMС) 3D simulation of stochastic migration of oxygen vacancies/ions in metal-oxide memristive devices promising for applications in emerging nonvolatile memory, in-memory and neuromorphic computing systems. The efficiency and flexibility of the approach is demonstrated by the examples of experimentally realized Au/oxide/TiN memristive device structures, in which yttria-stabilized zirconia (ZrO2(Y)) polycrystalline films and amorphous SiOx columnar films obtained by magnetron sputtering are used as the switching oxide material. The proposed approach combines the universal kMС framework for ion migration and relatively simple physics-based methods for taking into account additional factors related to the structure and morphology of specific oxide material, interface phenomena and energetics of electronic processes, and therefore does not require time-consuming calculations and is not critical to the computing power.
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