Abstract
Flexible memristive devices with a structure of Al/polyimide:mica/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/indium-tin-oxide/polyethylene glycol naphthalate showed electrical bistability characteristics. The maximum current margin of the devices with mica nanosheets was much larger than that of the devices without mica nanosheets. For these devices, the current vs. time curves showed nonvolatile characteristics with a retention time of more than 1 × 104 s, and the current vs. number-of-cycles curves demonstrated an endurance for high resistance state/low resistance state switchings of 1 × 102 cycles. As to the operation performance, the “reset” voltage was distributed between 2.5 and 3 V, and the “set” voltage was distributed between −0.7 and −0.5 V, indicative of high uniformity. The electrical characteristics of the devices after full bendings with various radii of curvature were similar to those before bending, which was indicative of devices having ultra-flexibility. The carrier transport and the operation mechanisms of the devices were explained based on the current vs. voltage curves and the energy band diagrams.
Highlights
Extensive investigations concerning flexible organic electronics, including memories, memristors, synaptic devices and nanogenerators, have been performed to improve their performance and efficiency for promising applications in flexible systems
The high resistance state (HRS)-to-low resistance state (LRS) transition corresponds to a set process in a memory cell
After the device had switched from the HRS to the LRS, it stayed in the LRS
Summary
Extensive investigations concerning flexible organic electronics, including memories, memristors, synaptic devices and nanogenerators, have been performed to improve their performance and efficiency for promising applications in flexible systems. Memristive devices based on various kinds of nanocomposites have been actively investigated to find ways to improve their electrical characteristics, and memristive devices based on hybrid inorganic/organic nanocomposites containing nanomaterials have currently emerged as excellent candidates for promising applications in flexible/wearable memristive devices due to their having high-mechanical flexibility and relatively low-cost[5,6,7,8,9]. Among the various kinds of 2D materials, a muscovite-type mica bulk has a large band gap, resulting in its having insulating properties. This paper reports data, obtained both before and after bending, for the electrical bistabilities, the memory stabilities, and the memory mechanisms of ultra-flexible memristive devices based on PI:mica nanosheet hybrid www.nature.com/scientificreports/. The carrier transport and the operation mechanisms were explained based on the I–V curves and the energy band diagram
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