Abstract
Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.
Highlights
Two-terminal, non-volatile memory devices are becoming the most effective and notable devices because of their data-storage capability and fast operating speed
The filament formation, which is responsible for the resistive switching, is explained with its underlying mechanism
This research might lead to the development of highly stable and flexible resistive-switching memristor devices for next-generation wearable electronics
Summary
Two-terminal, non-volatile memory devices are becoming the most effective and notable devices because of their data-storage capability and fast operating speed. A few prior studies suggest that graphene oxide (GO), among all the above choices for RRAM, has significantly more precise and viable utilizations on a scientific and commercial scale, due to its significantly lower cost of fabrication, naturally sustainable manufacturing process, and high mechanical flexibility; all of these properties make it a perfect priority for future electronics [12]. It is reported in previous studies that. This research might lead to the development of highly stable and flexible resistive-switching memristor devices for next-generation wearable electronics
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