Flexible low-voltage pentacene memory thin-film transistors with combustion-processable Al2O3 gate dielectric and Au nanoparticles

Abstract

A Au nanoparticles (NPs) embedded pentacene thin-film transistor (TFT) with solution-based Al2O3 was fabricated on a polyethersulfone substrate. The TFT for low-voltage operation within −3 V was realized with the Al2O3 dielectric film. By a combustion process for Al2O3, efficient driving of conversion reaction at low annealing temperature of 200 °C can be achieved and the device can be made on a plastic substrate. And, the Au NPs were deposited by the contact printing method using the polydimethylsiloxane stamp. From the electrical characteristics of the devices, a saturation mobility value of 4.25 cm2 V−1 s−1, threshold voltage (Vth) of ∼0.5 V, subthreshold swing of 70 mV dec−1 and memory window of 0.21 V at −3 V programming gate bias voltage were obtained.