Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs withMHz-dynamic operations

Abstract

High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire(NW)-based metal–semiconductor field-effect transistors (MESFETs) were constructed onflexible plastics through a noble top-down route. The representative GaAs-NW-basedMESFETs exhibited superior electrical characteristics such as a high mobility (∼3300 cm2 V − 1 s − 1), largeIon/Ioff ratio (∼108) and smallsubthreshold swing (∼70 mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logicswings of 97–99%. All of the logic gates successfully retained their electrical characteristicsduring 2000 bending cycles. Furthermore, the logic gates were well operated by square-wavesignals of up to 100 MHz under various strain conditions. The high performancesdemonstrated in this study open the way to the realization of high speed flexible logicdevices.