Abstract
Flexible dielectric film capacitors with high performance of energy storage has shown great promise as a solution to the flexibility and stability of modern electronics and electric power systems. Herein, a novel relaxor-ferroelectric BiMg0.5Ti0.5O3-xSrTiO3 (BMT-xSTO, x = 0.1, 0.2, 0.3 and 0.4) thin film capacitors are obtained via one-step fabrication on flexible mica substrates. A superior energy storage density of 109.7 J cm−3 and a pretty high efficiency of 80.6% are simultaneously achieved in the BMT-0.3STO film capacitor. At the same time, the energy storage performance can be stable in the temperature range of 25 to 200° C, the wide frequency range of 500 Hz to 10 kHz, and even after 108 electrical cycles. In addition, under the bending radii from 16 mm to 4 mm, there is no obvious variation in performance even after 104 mechanical fatigue cycles, indicating the super flexibility and stability of the film capacitors. The prominent properties of the BMT-based film capacitor are mainly attributed to the improvement of relaxation behavior by introducing appropriate STO, which are explained by the domain evolution via piezo-response force microscopy and phase field simulation. The present work suggests a new way to obtain lead-free and flexible dielectric film capacitors for flexible energy storage technology.
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