Flexible β‐Ga2O3 Nanomembrane Schottky Barrier Diodes

Abstract

AbstractHere, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β‐Ga2O3 nanomembranes (NMs). In order to realize flexible high power β‐Ga2O3 SBDs, sub‐micron thick freestanding β‐Ga2O3 NMs are created from a bulk β‐Ga2O3 substrate and transfer‐printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β‐Ga2O3 NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β‐Ga2O3 SBDs exhibit the record high critical breakdown field strength (Ec) of 1.2 MV cm−1 in the flat condition and 1.07 MV cm−1 of Ec under the bending condition. Overall, flexible β‐Ga2O3 SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high‐performance flexible applications.