Abstract
Full-color active-matrix organic light-emitting diode panels, driven by poly-Si thin-film transistors (poly-Si TFTs), were successfully fabricated on thin metal foil substrates. The p-channel poly-Si TFTs on metal foil showed a field-effect mobility of 82.9 cm2/Vmiddots, subthreshold slope of 0.34 V/dec, threshold voltage of -1.67 V, and off-current of 6.6times10-14 A/mum. The 5.6-in panel had 160 times RGB times 350 pixels, each of which had a pixel circuit of two TFTs and one capacitor
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