Abstract
Inorganic ferroelectrics which have low tensile strength and poor ductility are difficult to be bent. In this paper, in order to realize great toughness, the inorganic ferroelectric film was deposited on flexible muscovite (Mica) substrate. For efficiency and convenience, sol-gel method is adopted to fabricate the Bi3.15Nd0.85Ti3O12 (BNT) thin-film capacitor on flexible Mica substrate with SrRuO3 (SRO) electrode layer. The remnant polarization of the Pt/BNT/SRO/CFO/Mica capacitor achieves ∼38 μC cm−2, which is larger than most BNT films prepared on hard substrates. No obvious fatigue phenomenon is observed for the BNT capacitor with 1010 switching cycles. The most important is that the Pt/BNT/SRO/CFO/Mica capacitor still owns relatively stable electrical properties when it is bent to 5 mm radius, showing an excellent bending performance for this structure. The flexible, anti-fatigue ferroelectric capacitor prepared in this paper is expected to get a wide range of application in flexible logic and elements for information storage, data processing and communication.
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