Abstract
InGaO3(ZnO) superlattice nanowires are successfully fabricated by Guozhen Shen and co-workers in article number 1500054 and they are used for field-effect transistors and ultraviolet photodetectors that show good sensitivity with a spectral responsivity, fast response speed and high external quantum efficiency. Additionally, the high mechanical flexibility and good folding strength make the superlattice nanowire devices excellent candidates for future flexible optoelectronic applications.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
