Abstract
Low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors (TFTs) are self-assembled on SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large gate specific capacitance (5.8 μF/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) due to the electric-double-layer effect. The subthreshold swing, drain-current on/off ratio, and field-effect mobility are estimated to be 80 mV/dec, 4 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> , and 9.3 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s, respectively. Low-voltage operation mechanism and threshold voltage modulation of such dual-gate paper TFTs are investigated.
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