Abstract
AbstractFlexible and air‐stable phototransistors are highly demanded for wearable near‐infrared (NIR) image sensors. However, advanced NIR sensors via low‐cost, solution‐based processes remained a challenge. Herein, high‐performance inorganic–organic hybrid phototransistors are achieved based on solution processed n‐type metal oxide/polymer semiconductor heterostructures of In2O3/poly{5,5′‐bis[3,5‐bis(thienyl)phenyl]‐2,2′‐bithiophene‐3‐ethylesterthiophene]} (PTPBT‐ET). The In2O3/PTPBT‐ET hybrid phototransistor combines the advantages of both fast electron transport in In2O3 and high photoresponse in PTPBT‐ET, showing high saturation mobility of 7.1 cm2 V−1 s−1 and large current on/off ratio of >107. As a result, the phototransistor exhibits high performance towards NIR light sensing with a responsivity of 200 A W−1, a specific detectivity of 1.2 × 1013 Jones, and fast photoresponse with rise/fall time of 5/120 ms. Remarkably, the hybrid phototransistor, without any passivation, demonstrates excellent electrical stability without performance degradation even after 160 days in air. A 10 × 10 phototransistor array is also enabled by virtue of the high device uniformity. Lastly, flexible In2O3/PTPBT‐ET phototransistor on polyimide substrate is attained, exhibiting outstanding mechanical flexibility up to 1000 bending/releasing cycles at a bending radius of 5 mm. These achievements pave the way for constructing air‐stable hybrid phototransistors for flexible NIR image sensor applications.
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