Abstract
We fabricated fully patterned all-organic field-effect transistors on polymethyl methacrylate substrates by the selective electrochemical doping of electrically conducting poly(3,4-ethylenedioxythiophene) / tetraethylammoniumhexafluorophosphate into polymer films coated on an electrode surface for the source and drain contacts. Polyvinyl alcohol and pentacene were used as the insulating and active layers respectively. We built top-gate structures with gates printed on top of the gate dielectric layer. Carrier mobilities as large as 0.02 cm2/V·s were measured. Functional all- organic transistors were realized using a simple and potentially inexpensive technology that does not depend on photolithographical processes.
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