Abstract
Recently, poly(vinylidene fluoride) (PVDF)-based multilayer films have demonstrated good potential as high energy density, high temperature, and low loss polymer dielectrics for advanced electrical and power applications. However, impurity ion conduction in the PVDF layers can cause significant dielectric loss at high temperatures. In this study, we discovered a facile melt-recrystallization method to suppress ionic conduction loss in polysulfone (PSF)/PVDF 50/50 (v/v) 33-layer films. By use of combined differential scanning calorimetry, broadband dielectric spectroscopy, and simultaneous small-angle X-ray scattering/wide-angle X-ray diffraction techniques, the underlying mechanism for the suppression of ionic conduction was unraveled. Basically, the growth and hierarchical organization of primary and secondary PVDF crystals confined in 400 nm layers played an important role. When the cooling rate during melt-recrystallization was high (e.g., ≥500 °C/min), small and poorly oriented secondary crystals betw...
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