Abstract
AbstractWe report recent results showing broad‐band excitation of erbium ions implanted into thin films of silica containing silicon nanoclusters. Indirect excitation of the rare‐earth ions is mediated by the nanoclusters, which are either grown in during plasma‐enhanced chemical vapour deposition of the films, or are formed by implantation of thermally grown SiO2 layers with Si+ ions. We demonstrate efficient flashlamp pumping of the erbium 1535 µm photoluminescence band and discuss the device implications of this material. Copyright © 2001 John Wiley & Sons, Ltd.
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