Abstract
SummaryThin TCO layers, like ITO and AZO, are commonly used in applications where highly conductive and transparent thin film systems are necessary for large area applications such as displays, touch panels, electroluminescent devices, electrochromics, energy efficient window systems and photovoltaics. At present the best ITO and AZO quality is attained with films deposited by means of magnetron sputtering using ceramic targets at substrate temperatures above 200 °C. In this study have been investigated TCO films deposited by reactive magnetron sputtering from a rotary indium‐tin target, ITO films sputtered from ceramic target and reactively sputter deposited AZO films from zinc‐aluminium targets, respectively.A promising approach to improve the properties of TCO films sputtered at low substrate temperatures is the application of post‐growth treatment by flash lamp annealing. This has been applied for ITO and AZO samples that have been deposited at various temperatures and oxygen partial pressures.
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