Abstract
Flash-lamp annealing (FLA) of a millisecond time scale has been shown to be a promising tool in the preparation of high-quality semiconducting materials. The flash lamp anneal pulse width is so small that thermal stress becomes small. We used flash-lamp annealing to improve the quality of oxide material for the thin film transistor (TFT) application. We investigated the flash lamp annealing effect to improve the stability of Oxide TFT. We have investigated Xenon (Xe) FLA effect on the stability of each IGZO single layer and Oxide TFT as varying the power of the lamp. And also, we investigated the effect of the shot numbers of the flash lamp. We measured the light illumination effect on the transfer curves. FLA improved the stability of the IGZO TFT without substrate damage. Crystallization by FLA occurred under 8kW 5shots at Room temperature (RT). The light illumination stability was better for higher energy of FLA under the non-crystallized condition, which was 8kW 5shots at RT.
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