Flame emission spectra in the region 400-600 nm during low-pressure silane and dichlorosilane oxidation

Abstract

The flame emission in the region 400–600 nm during monosilane and dichlorosilane oxidation (initial pressures of 3–20 torr; T = 300 K) is caused by radical luminescence processes on the surface of aerosol microparticles of the SiO2 formed. The generation of energy by the interaction of gas-phase species with the SiO2 surface at the initial stages of the phase formation depends on the presence of the intrinsic structural defects Si+ and defects like Si+ implanted into SiO2. The addition of SF6 to the starting mixture results in the appearance of emission bands due to the Si+ defects in the radical luminescence spectrum.