Abstract
A fixtureless delamination test has been developed to measure the interfacial fracture toughness of patterned nanoscale thin films on a substrate. The driving energy for delamination propagation is supplied by a highly stressed superlayer deposited on top of the nanoscale thin film. The amount of energy available for delamination propagation is changed by depositing an etchable thin release layer with varying width between the nanoscale thin-film strip and the substrate. By designing a decreasing area of the release layer, it is possible to arrest the delamination at a given location, and the interfacial fracture toughness or critical energy release rate can be found at the location where the delamination ceases to propagate. For titanium film with a thickness of 90 nm, the results show that the interfacial fracture toughness of titanium/silicon ranges from 3.45 J/m 2 to 5.70 J/m 2 when the mode mixity increases from 6.8° to 38.4°. The methodology presented in this paper is generic in nature, and can be used to measure the process-dependent interfacial fracture toughness of various micro and nanoscale thin films on a substrate.
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