Abstract
The concentric circle pattern of growth striations in Czochralski (CZ) silicon wafer has been found to cause the fixed pattern noise in the reproduced image by solid-state imagers with the p-well structure. The microgrowth striations of dopant impurities in 4-in. n-type CZ silicon wafers have been examined in terms of noise video signals of p-well Charge Priming Device imagers. Striation periods as narrow as 10 μm can be revealed, which may be overlooked by the conventional spreading resistance method.
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