Abstract
An improved gallium arsenide (GaAs) MESFET model for nonlinear large-signal circuit design is described, together with the parameter estimation and optimisation techniques. The new model is based on the work of Curtice and offers significant advantages in the simulation of the device in the low-current region. This is achieved by modelling the bias dependency of the pinch-off voltage. Data showing the bias dependency of the device model parameters is provided and a comparison between the new model, the Curtice model and the Schichman-Hodges FET model is made, with the use of a wide variety of different size devices. The software modules for the automated characterisation and modelling of GaAs devices are also described.
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