Abstract
Abstract The band structure and the electronic transport properties of pure, indium, arsenic and aluminum substituted gallium phosphide nanoribbon and defect gallium phosphide nanoribbon are investigated using first-principles studies. The band structure of pure and impurity substituted GaP nanoribbons exhibit metallic nature. The density of states can be altered with the substitution impurity and also by creating defects in the nanostructure. The electron density increases for indium, arsenic and aluminum substitution in GaP nanoribbon. The transmission across the gallium phosphide can be modified with the substitution impurity and defect in the nanoribbon. The transmission can be enhanced with the substitution impurity at different energy intervals. The findings of the present study give an insight to tailor gallium phosphide nanostructures in optoelectronic applications.
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