Abstract
The tensile strength and fracture of the non-polar interface of the {122} Σ=9 coincidence tilt boundary in cubic SiC have been examined through the behavior of electrons and atoms based on the density-functional theory. This interface is very strong because of the reconstruction of interfacial bonds. The tensile strength is about 80% of that of bulk crystal. The Young's modulus and the fracture toughness are also comparable to the bulk values. The back Si-C bond of the interfacial C-C bond is broken first because of the large strength of the C-C bond. Critical bond stretchings for the Si-C bond breaking are observed. Changes in the electronic structure are analysed.
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