Abstract
We report the spin transport in silicon carbide nanotube based magnetic tunnel junction with half-metallic-ferromagnet $$\hbox {CrO}_{2}$$CrO2 as electrodes. The simulations based on first principles suggest high tunnel magnetoresistance $$\sim $$~100 % at zero bias, TMR remains high at higher bias voltages. I---V characteristics show that spin current in parallel magnetic configuration is much higher than the spin current in anti-parallel configuration. Perfect spin-filtration effect is obtained for this structure. Transmission coefficients are also calculated to understand the spin and bias dependent non-equilibrium transport properties.
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