First-principles study of native point defects in crystalline indium gallium zinc oxide

Abstract

Materials in In–Ga–Zn–O system are promising candidates for channel layers of high-performance thin-film transistors (TFTs). We investigated the atomic arrangements and the electronic structures of crystalline InGaZnO4 containing point defects such as oxygen vacancy (VO), interstitial hydrogen (Hi), and interstitial oxygen (Oi) by density functional theory (DFT) using a plane-wave pseudopotential method. The calculations for the atomic structure relaxation suggest that Hi bonds to a lattice oxygen (OO), and Oi occupies a split interstitial site [Oi(split)] forming a chemical bond with OO which is similar to O2 molecule, or Oi occupies an octahedral interstitial site [Oi(oct)]. The electronic structure calculations reveal that VO forms fully occupied states around the middle of the DFT band gap, while Hi does not form a defect level in the band gap but raises the Fermi level above the conduction band minimum. Oi(split) forms fully occupied states above the valence band maximum of the defect-free model (VBM0), while Oi(oct) forms both occupied and unoccupied states above the VBM0. It is thus suggested that VO and Oi(split) are electrically inactive for electrons but work as hole traps, Hi acts as a donor, and Oi(oct) is electrically active, trapping both electrons and holes. These observations imply that VO and Oi(split) do not but Hi and Oi(oct) influence electrical properties of the n-channel TFTs based on the In–Ga–Zn–O semiconductor materials.