Abstract
Interlayer exchange coupling (IEC) in a series model diluted magnetic semiconductor multilayers consisting of two magnetic (Ga, Mn)As layers separated by nondoped or Be-doped GaAs nonmagnetic spacers is studied by first-principles calculations. For the GaAs spacers without Be doping, the IEC is always ferromagnetic and is well described by the Ruderman–Kittle–Kasuya–Yoshida interaction based on a two-band model for a gaped system. For the Be-doped GaAs spacers, the IEC is found to be tunable and the antiferromagnetic IEC is achieved via Be-doping in the interfaces between the (Ga, Mn)As layers and the spacers.
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