Abstract

We investigate essential fundamental properties of monoclinic (Ta1–xNbx)ON (x = 0.0625, 0.125, 0.25, and 0.5) solid solution semiconductor materials for water splitting using first-principles computations on the basis of density functional theory (DFT) and density functional perturbation theory (DFPT) using the PBE and HSE06 functionals. The formation energies, band gaps, UV–vis optical absorption coefficients, dielectric constants, charge carrier effective masses, and band edge energy positions of these compounds are evaluated. Similarly to TaON, our calculations reveal strongly 3D delocalized characters of the band edge electronic states through the crystal lattices, high dielectric constants, small hole effective masses along the [001] direction, and small electron effective masses along the [100] direction. This leads to good exciton dissociation ability into free charge carriers, good hole mobility along the [001] direction, and good electron mobility along the [100] direction. The main difference, h...

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