Abstract
MgSiN2 semiconductor is alternative material beyond the family of III-N, which is used widely in optoelectronic devices. This work presents the calculations of the dielectric tensor, Born effective charge tensor, phonon frequencies at Γ point, phonon dispersion, Helmholtz free energy (ΔF), internal energy (ΔE), entropy (ΔS) and specific heat capacity at constant volume (Cv) of MgSiN2 by using the density-functional perturbation theory (DFPT) as implemented in ABINIT. We found that the phonons and thermal properties of MgSiN2 have similar properties to those of ZnSiN2 and Cv of MgSiN2 are in agreement with the available experimental results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
