Abstract
Based on density-functional first-principles calculations and the Wannier interpolation technique, we have investigated the electron-phonon coupling (EPC) in hole-doped monolayer hexagonal boron nitride (h-BN). We align the Fermi level to a Van Hove singularity by 0.4 holes/cell doping, the largest hole concentration that can be realized in monolayer h-BN. Under this doping level, the EPC for free-standing monolayer h-BN is weak. However, biaxial tensile strain can enhance the EPC significantly. We predict that monolayer h-BN can become a phonon-mediated superconductor by the synergic effects of hole doping and biaxial tensile strain, with transition temperature exceeding 40 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
