Abstract
The first-principle theoretical studies about the effects of the electric field and oxygen vacancies on the structural relaxation of rutile titanium dioxide and the impacts of the relaxed structures on the capacitor-voltage curves are reported. The results show that oxygen vacancies in the same side bring more unstable bonds between oxygen atoms and titanium atoms than they do in the two sides. Titanium atoms dominate the interactions with oxygen vacancies on the unstable bonds. The unstable bonds of Ti-O would be broken at an electric field of 2.6 MV/cm. The broken bonds caused by the electric field and oxygen vacancies can form the conduction path in rutile titanium dioxide. The static dielectric constants are dependent on the dispersion of oxygen vacancies. It is concluded that the capacitor-voltage curves of Metal/TiO2/P-Si structure are dependent on the oxygen vacancies. It can help us to clarify the atom-level mechanism of the conduction path in resistive switching in resistance random-access memory.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
