Abstract

In the present paper, the nature of electronic states and transport properties of nanostructured flower-like molybdenum disulphide grown by hydrothermal route has been studied. The band structure, electronic nature of charge, thermodynamics and the limit of phonon scattering through density functional theory (DFT) has also been studied. The band tail states, dynamics of trap states and transport of carriers was investigated through intensive impedance spectroscopy analysis. The direct fingerprint of density and band tail state is analyzed from the capacitance plot as capacitance reflects the capability of a semiconductor to accept or release the charge carriers with a corresponding change in its Fermi potential levels. A recently introduced infrared photo-carrier radiometry and density functional perturbation theory (DFPT) techniques have been used to determine the temperature dependence of carrier mobility in flower type-MoS2. The present study illustrates that a large amount of trapped charges leads to an underestimation of the measured effective mobility and the potential of the material. Thus, a continuous engineering effort is required to improve the quality of fabricated nanostructures for its potential applications.

Highlights

  • The possible mechanism for the formation of flower-like MoS2 nanostructures is suggested as follows: MoO4− and ammonium ions released from the ammonium molybdate and sulphur released from thio urea during the hydrothermal synthesis acts as a source for the formation of MoS2 nanostructures

  • These MoO4− ions react with sulphur ions to form MoS2 while the interaction of residual ammonia prevents the stacking of MoS2 nanostructures[19,20]

  • The present study reveals about the band tail states, dynamics of trap states and transport of carriers through systematic impedance spectroscopy analysis and from first principle studies using density functional theory

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Summary

Results and Discussion

The calculated values of entropy at 300 K and 500 K are 15.11 and 23.34 kB/unit cell, respectively The difference between these values could be responsible for increasing the maximum value of the phonon frequencies of MoS2 nanostructures (see Fig. 4). As mentioned above, experimentally measured dependencies differ from this value of ~T−3/2 Reasons for this discrepancy includes: (a) contributions from other scattering mechanisms may be present (for example, at temperatures above 100 K, the contribution of optical phonon scattering becomes considerable, which lowers the value of the mobility); and (b) the non parabolicity, the distortion of equi-energy surfaces as well as the effect of split-off sub-band holes may contribute

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