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Abstract
Based on the density functional pseudo-potential method, the structural properties, the band structure, the density of states and the optical properties of the pure and Sc-doped AlN are calculated. The calculation results indicate that the defect of Sc(Al) exists steadily with a certain solubility in the doped system. Sc substitution of the Al site induces effective reduction of the band gap of AlN and the band gap being continuously reduced when increasing Sc concentrations. The existence of the strong hybridization between Sc 3d and N 2p indicates the transport of electrons from Sc atoms to N atoms. Besides, it is shown that the insertion of Sc atom leads to redshift of the optical absorption edge. The intensity of both the imaginary part of the dielectric function and the optical absorption of Al1 − xScxN are found to decrease with increasing Sc concentrations in the low energy range.
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