Abstract
Regulating the magnetic state of 2D materials is becoming increasingly important for the next generation of spintronic devices. In this study, the first-principles calculation method is used to study the synergistic modulating effect of biaxial strain and vacancy defects on the magnetic properties of blue phosphorene. Results show that only Single Vacancy (SV) doping magnetizes the intrinsic blue phosphorene, Double Vacancy-1 (DV-1), Double Vacancy-2 (DV-2) and Double Vacancy-3 (DV-3) doped blue phosphorene are magnetized under biaxial strain. The magnetic states of SV, DV-1, DV-2 and DV-3 systems change with the intensity of biaxial strain. In some cases, the magnetic moment of the system can be changed from 0 μB to 4 μB. The biaxial strain affects the partially bonding structure near the defects, changes the position of the dangling bond, and thereby adjusts the magnetic state. Our research provides positive guidance for the future application of blue phosphorene in the semiconductor field.
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