Abstract

With ab initio calculations, we studied the structural, electronic, and magnetic properties of quaternary Heusler compounds KCaCX (X = Br and I) adopted stable and metastable phases. We found that the most stable structure is type-3 atomic arrangement configuration where K, Ca, C, and X atoms occupy (0, 0, 0), (0.5, 0.5, 0.5), (0.25, 0.25, 0.25) and (0.75, 0.75, 0.75) positions, respectively. The metastable one is type-1 configuration where K, C, Ca and X occupy (0, 0, 0), (0.5, 0.5, 0.5), (0.25, 0.25, 0.25) and (0.75, 0.75, 0.75) positions, respectively. The results show that they are half-metallic ferromagnets with integer magnetic moments of 2.0 μB at their equilibrium lattice constants. It is also found that the spin-polarization is mainly from the C-2p states. In addition, KCaCBr compound with type-1 configuration shows an electronic transition from ordinary half-metallic state to zero-gap half-metallic state with the changing the lattice parameter.

Highlights

  • Half-metallic (HM) materials with different structures, including Heusler structures, binary compounds with rock-salt and zinc-blende structures,[1,2,3] have aroused much attention in the past few years due to 100 % spin polarization at the Fermi level where one spin channel is semiconducting or insulating behavior and the other is metallic character

  • Many works on d0 compounds with binary DO3 structure, ternary half-Heusler structure and full-Heusler structure, have been done theoretically.[9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26]

  • Research and report on d0 HM compounds with quaternary Heusler structure is still rare

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Summary

INTRODUCTION

Half-metallic (HM) materials with different structures, including Heusler structures, binary compounds with rock-salt and zinc-blende structures,[1,2,3] have aroused much attention in the past few years due to 100 % spin polarization at the Fermi level where one spin channel is semiconducting or insulating behavior and the other is metallic character. A novel HM compound, Fe2CoSi, with a conducting property in one spin channel and a zero band-gap in the other spin channel, was firstly theoretically proposed by Du et al.[4] This kind of material is defined as zero-gap half-metal and due to its special band-structure, it may possess a unique magnetoresistance behavior similar to spin-gapless semiconductor. Many works on d0 compounds with binary DO3 structure, ternary half-Heusler structure and full-Heusler structure, have been done theoretically.[9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26] research and report on d0 HM compounds with quaternary Heusler structure is still rare.

COMPUTATIONAL DETAILS
RESULTS AND DISCUSSION
CONCLUSIONS
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