Abstract
InSb the group III-V semiconductor with narrow band gap is combined with Mn in various concentrations and that InSb–Mn alloy is doped with poly methyl methacrylate (PMMA). The optical properties and electronic structure of ternary InSb–Mn alloy with PMMA are investigated by first principles calculations using the DFT method. Varying Mn concentrations play an important role in the improvement of the absorption coefficient and optical conductivity. It is observed that the band gap of InSb–Mn: PMMA decreases monotonously with the increase in Mn concentration. Optical properties of InSb–Mn: PMMA, such as the optical absorption coefficient and optical conductivity, are greater than those of pure InSb. InSb–Mn: PMMA alloy is doped with PMMA polymer in order to make a thin film as PMMA is a transparent thermoplastic polymer. These results suggest a promising application of InSb–Mn: PMMA thin film in optoelectronics when the InSb doping is 24% with improved conductivity when compared with other doping ratios. This states the optimum doping ratio and the major finding in the carried out research based on modelling and simulation.
Highlights
III-V semiconductors, because of their structure, play a crucial role in scientific research and its application
Preparation of the device of compound semiconductors of III-V group elements has improved in recent years as these compounds are proven technologically that these are highly helpful for galvanometric devices, high-speed electronics, magnetic sensors, and infrared detectors in distinct wavelength ranges [1,2,3]
We propose a polymer thin film made of InSb–Mn and poly methyl methacrylate (PMMA) for improved conductivity and absorption
Summary
III-V semiconductors, because of their structure, play a crucial role in scientific research and its application. Preparation of the device of compound semiconductors of III-V group elements has improved in recent years as these compounds are proven technologically that these are highly helpful for galvanometric devices, high-speed electronics, magnetic sensors, and infrared detectors in distinct wavelength ranges [1,2,3]. InSb and doped InSb semiconductor are widely implemented in infrared detectors and highspeed devices because of narrow band gap [4] of 0.17 eV at 300k and 0.23 eV at 80k and its high electron. E leading advancement in thin film materials and devices has initialized many of developments in field of flexible electronics including polymers, nanowires, carbon nanotubes, or other nanomaterials with semiconducting thin films enabling the enhancement in their properties [8, 9] Devices based on such composites show improvements in electrical performance. The gap in the process was addressed in the present work to cut short the time and to identify the optimum doping concentration before even going for experiment
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
