Abstract
The charge transport properties of zigzag graphene nanoribbons (ZGNRs) under uniaxial and shear strains are theoretically studied. Although all strained ZGNRs have similar metallic band structures, they show four types of transport behavior under bias voltages that depend on the type of strain and the mirror symmetry of the ZGNR. Under an applied uniaxial strain, the current of symmetric ZGNRs is consistently small, while for asymmetric ZGNRs it is large. In contrast, the current increases with increasing shear strain for symmetric ZGNRs while it decreases for asymmetric ZGNRs. The current properties merge when the shear strain exceeds a critical value, and the two systems then show similar behavior. Our results suggest that strained ZGNRs with an appropriate applied shear are ideal conducting wires.
Highlights
Graphene is a promising material for developing the generation of electronic devices[1] due to its high carrier mobility[2] and excellent mechanical properties.[3]
Even though all zigzag graphene nanoribbons (ZGNRs) have similar metallic electronic structures, Li et al showed that unstrained ZGNRs can exhibit unexpected semiconductor-like behavior under nonzero bias voltage that depends on the symmetry of the systems.[32]
We study the effect of uniaxial and shear strains on the transport properties of ZGNRs under various bias voltages using a first-principles non-equilibrium Green’s function method
Summary
Graphene is a promising material for developing the generation of electronic devices[1] due to its high carrier mobility[2] and excellent mechanical properties.[3]. Even though all ZGNRs have similar metallic electronic structures, Li et al showed that unstrained ZGNRs can exhibit unexpected semiconductor-like behavior under nonzero bias voltage that depends on the symmetry of the systems.[32] In particular, asymmetric ZGNRs behave as conventional conductors with linear current-voltage dependence while symmetric ZGNRs exhibit unexpected semiconductor-like behavior with only small currents under bias voltages. This posed the question whether ZGNRs could act as conducting wires in all-graphene electronics. The relationship between ZGNR symmetry and the type of strain has been investigated
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