Abstract

Heterojunction is widely acknowledged as a potent strategy as an effective means for achieving quality electronic, optical adsorption, and photocatalytic water-splitting properties. Strain also can regulate these properties effectively. In this study, we have fabricated and studied a heterojunction comprised SiC and WS2. Utilizing a first-principles method, we systematically investigated the SiC/WS2 heterojunction's structure, stability, electronic, and optical properties, as well as its photocatalytic water splitting characteristics under strain engineering. Our calculations reveal that the SiC/WS2 heterojunction is a type-II heterostructure with two stable structures, which exhibits a direct bandgap and well performance in the visible light region, facilitating efficient separation of photogenerated electron-hole pairs. We have explored and discussed the impacts of biaxial strain on the various properties. The bandgaps of System-A and B are 1.778 eV and 1.820 eV, respectively, without strain. Under strain from −6% to 10%, they initially rise, peak at 1.858 eV and 1.899 eV respectively at −2% strain, then decline. Without strain, effective mass mh/me for both structures are 1.642 and 1.673. Under positive strain, they increase, decrease, then increase again, peaking at 6% with 2.116 and 2.260. At −2% strain, values drop to 0.901 and 0.910 for A and B, respectively. Our calculations also demonstrate that the SiC/WS2 heterostructure qualifies as a promising photocatalytic material, fulfilling the criteria for water splitting under strain conditions of −4%, −2%, and 0%. And the heterojunction with System-B under −4% strain has the optimal performance in photocatalytic water splitting. At a strain of −4%, System-B achieves the maximum η′STH of 16.91%. In conclusion, our study not only offers fundamental insights into the utilization of SiC/WS2 heterojunctions for photocatalytic water splitting, but also provides the foundational design principles of heterojunctions.

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