Abstract
We investigate the strain effect on the radiation hardness of hexagonal boron nitride (h-BN) monolayers using density functional theory calculations. Both compressive and tensile strains are studied in elastic domains along the zigzag, armchair, and biaxial directions. We observe a reduction in radiation hardness to form boron and nitrogen monovacancies under all strains. The origin of this effect is the strain-induced reduction of the energy barrier to displace an atom. An implication of our results is the vulnerability of strained nanomaterials to radiation damage.
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