First principles study of the 2D Mo(S1-XTeX)2 TMD alloy adsorbed on an Al-terminated sapphire (0001)-substrate

Abstract

A first principles study, was performed for a 2D, three atom thick monolayer of the Transition Metal Dichalcogenide (TMD) alloy Mo(S1-XTeX)2 adsorbed on an Al-terminated (0001)-sapphire surface. Bulk composition dependent binding energies and band-gaps, and a partial phase diagram, were calculated, using the cluster expansion method. Although the 3D Mo(S1-XTeX)2 alloy system has a phase diagram that is dominated by S-rich/Te-rich phase separation, the 2D system adsorbed on sapphire is dominated by S:Te-ordering. Five ground-state phases are predicted; all have P1 symmetry, and all disorder via contiuous (2’nd order) transitions. These results indicate that synthesis on the sapphire substrate is favorable for band-gap engineering, in which a continuous single phase solid solution allows continuous band-gap tuning, as a function of bulk composition. Whereas, bulk TMD-synthesis followed by exfoliation favors the formation of two-phase mixtures.