First principles study of semihydrogenated graphene and topological insulator heterojunction

Abstract

Based on first principles calculations, we study the electronic properties of heterostructures formed by a 2D ferromagnetic insulator semihydrogenated graphene (SG) and topological insulator Bi2Se3 thin films of a few quintuple layers (QLs). It is found that the unsaturated C atoms in SG form bonds with Se atoms in Bi2Se3 thin film and the top surface states (at the interface) are strongly hybridized with SG. Due to breaking of time-reversal symmetry, the surface states open gaps of 40 meV and 150 meV for SG/3QL-Bi2Se3 and SG/5QL-Bi2Se3 heterostructures, respectively. Furthermore, a giant Rashba spin splitting is found induced by the SG layer.