Abstract
Schottky barrier behavior at Al/InN and Au/InN interfaces was investigated using first-principles calculations. It was shown that the Fermi energies of both Al and Au metals are located above the conduction-band bottom of InN, and that the electron charge transfer occurs from metal layers to InN layers around the interface. We found that such electron transfer induces microscopic band bending in InN layers around the interface. We also evaluated the intrinsic Schottky barrier heights at these interfaces.
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