Abstract
The oxidation of the α-Ti(0001) surface was studied using the density functional theory. To enhance the oxidation resistance, we substituted Ti atoms with Si atoms on the Ti(0001) surface. We observed that Si prefers to segregate at the surface layer of Ti(0001) compared with other subsurface layers. The Si solubility on the Ti(0001) surface, based on the segregation energy, was found to be much larger than the corresponding bulk solubility. Si segregation was found to reduce the binding between the oxygen atom and the Ti(0001) surface and hinder the diffusion of oxygen atoms into the slab. The dissociation of the oxygen molecule on the clean and Si-segregated surfaces of Ti was found to be barrierless. Overall, the Si segregation on the Ti(0001) surface was found to hinder the dissolution of oxygen in Ti.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
