Abstract

Constructing van der Waals heterostructures from layered materials can form new optoelectronic devices with superior performance to the individual monolayers. Here, we use first-principles calculations to explore the modulation of a two-dimensional BAs/MoSi2N4 van der Waals heterostructure via strain, including the structure stabilities, electronic properties, charge transfer, and optical properties. Our calculated results reveal that the BAs/MoSi2N4 heterostructure has a direct bandgap of 0.72 eV and type-I band alignment. In addition, the BAs/MoSi2N4 heterostructure exhibits enhanced light absorption in the visible light region. The electronic properties of the BAs/MoSi2N4 heterostructure are tunable by vertical strain, exhibiting a direct to indirect bandgap transition as well as a type-I to type-II band alignment transition when the vertical distance is reduced. Our research provides a comprehensive understanding of the electronic and optical properties of the BAs/MoSi2N4 heterostructure and could be helpful for their potential applications in optoelectronic devices.

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