Abstract
Interlayer exchange coupling (IEC) in a series model diluted magnetic semiconductor multilayers consisting of two magnetic (Ga, Mn)As layers separated by nondoped or Be-doped GaAs nonmagnetic spacers is studied by first-principles calculations. For the GaAs spacers without Be doping, the IEC is always ferromagnetic and is well described by the Ruderman–Kittle–Kasuya–Yoshida interaction based on a two-band model for a gaped system. For the Be-doped GaAs spacers, the IEC is found to be tunable and the antiferromagnetic IEC is achieved via Be-doping in the interfaces between the (Ga, Mn)As layers and the spacers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
