Abstract
First-principles simulations have been used to investigate the electron spin resonance g-factors of Ge Pb0 and Pb1 dangling-bond centers of germanium rich SixGe(1−x)On alloys. The computed values and the relative orientation of the dangling bond orbital have been compared to experimental results, allowing for the identification of a Ge Pb1 type center at (100)SixGe(1−x)/SiO2 interfaces.
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